GVC736CE101 3BHE039203R0101 IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in the periphery in a low inductance way. It combines the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and plays the performance of the thyristor in the conduction stage, and presents the characteristics of the transistor in the turn-off stage.

GVC736CE101 3BHE039203R0101 IGCT has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device.

GVC736CE101 3BHE039203R0101 3BHE039204P201