5SHX1060H0003 3BHB020538R0001  IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in the periphery in a low inductance way. It combines the advantages of stable turn-off capability of the transistor and low on-state loss of the thyristor.

5SHX1060H0003 3BHB020538R0001  The thyristor performance is played in the on stage, and the transistor characteristics are played in the off stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low conduction loss, and low cost, high yield, and has a good application prospect.

5SHX1060H0003 3BHB020538R0001  IGCT has been successfully used in the field of medium voltage frequency converters for 11 years (up to 2009). Due to the high speed switching capability of IGCT without buffer circuit, the number of power components required is less.

5SHX1060H0003 3BHB020538R0001  The reliability of operation is greatly increased. IGCT integrates the high-speed switching characteristics of IGBT (insulated gate bipolar transistor) and the high blocking voltage and low on-off loss characteristics of GTO (gate cut-off product thyristor). Generally, the trigger signal is transmitted to the IGCT unit through optical fiber.

5SHX1060H0003 3BHB020538R0001  In the phase module of the edge rectifier unit of ACS6000, each phase module is composed of IGCT, diode and clamp capacitor, and is provided with energy by an independent gate power supply unit GUSP.

5SHX1060H0003 3BHB020538R0001 3BHE024415R0101 GVC714A101