Littelfuse Corporation (NASDAQ: LFUS) is an industrial technology manufacturing company dedicated to powering a sustainable, connected and safer world. The company is proud to announce the IX4352NE low side SiC MOSFETs and IGBT gate drivers. This innovative driver is specifically designed to drive silicon carbide (SiC) MOSFETs and high power insulated gate bipolar transistors (IGBTs) in industrial applications.

The main advantage of the IX4352NE is its independent 9A pull/fill current output, which supports tailor-made on and off timing while minimizing switching losses. The internal negative charge regulator also provides user selectable negative gate drive bias for higher dV/dt immunity and faster turn-off speeds. With an operating voltage range of up to 35V (VDD-VSS), the driver offers excellent flexibility and performance.

CC-PAOH01 One of the IX4352NE’s standout features is the internal negative charge pump regulator, which requires no external auxiliary power devices or DC/DC converters. This feature is especially useful for turning off SiC MOSFETs, saving valuable space typically required by external logic level converter circuits. The logic input is compatible with standard TTL or CMOS logic levels, further enhancing the ability to save space.

The IX4352NE is ideal for driving SiC MOSFETs in a wide range of industrial applications, such as:

• Car and non-car chargers,

• Power factor Correction (PFC),

• DC/DC converter,

• Motor controller, and

• Industrial power inverter.

Its superior performance makes it ideal for demanding power electronics applications in the electric vehicle, industrial, alternative energy, smart home and building automation markets.

With its comprehensive features, the IX4352NE simplifies circuit design and provides a higher degree of integration. Built-in protection features such as desaturation detection (DESAT), undervoltage lock (UVLO) and thermal shut-off (TSD) with soft turn-off fill current drivers ensure that power devices and gate drivers are protected. Integrated leak-open FAULT outputs signal a fault to the microcontroller for increased safety and reliability. In addition, the IX4352NE saves valuable PCB space and increases circuit density, helping to improve overall system efficiency.

Significant improvements to the existing IX4351NE include:

• Safe soft shutdown activated by DESAT.

• High threshold precision thermal shutdown.

• Ability of charge pump to work during thermal shutdown.

CC-PAOH01 The new IX4352NE is pin-compatible and seamlessly replaces designs specified to use the existing Littelfuse IX4351NE, which was released in 2020.

“The IX4352NE extends our extensive family of low-side gate drivers with a new 9A pull/fill current driver that simplifies the gate drive circuitry required for SiC MOSFETs.” June Zhang, Product Manager, Littelfuse Integrated Circuits Division (SBU), said, “Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage that improves dV/dt immunity and turn-off speed. As a result, the product can be used to drive any SiC MOSFET or power IGBT, whether it’s a Littelfuse device or any other similar device on the market.”

availability

The IX4352NE low side SiC MOSFETs and IGBT gate drivers are available in tube packs of 50 per tube or in roll-tape packages with a MOQ of 2,000. Samples are available on request from Littelfuse’s authorized distributors worldwide.