3BHE039204P106 GVC736CE101 IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume of the converter, and brought a new leap to the complete set of power electronic devices. IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in the periphery in a low inductance way. It combines the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and plays the performance of the thyristor in the conduction stage, and presents the characteristics of the transistor in the turn-off stage.

3BHE039204P106 GVC736CE101 IGCT has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure, low loss, and low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device. Compared with IGBT using transistor technology, it has higher performance in cut-off voltage. However, the widely used standard GTO drive technology causes uneven turn-on and turn-off processes, which requires high-cost dv/dt and di/dt absorption circuits and high-power gate drive units.

3BHE036204P201 3BHE039204P106 GVC736CE101