ABB’s Model 5SHX1060H0003 IGCT (Integrated Gate commutated thyristor) module, part number 3BHB020538R0001, is a high-performance semiconductor device with a wide range of applications in industrial automation and power electronics. The superior performance of this IGCT module enables maximum load capacity and minimum number of parts, significantly increasing the efficiency and reliability of the system.
The 5SHX1060H0003 IGCT module has a number of technical features, including high voltage tolerance, high current density, high switching speed and low leakage current. Specific technical parameters are as follows:
Nominal voltage: 1200V
Nominal current: 1060A
Ac voltage: 1800V
Dc voltage: 2400V
Repeat peak reverse voltage: 1400V
Rated power: 1400kW
Package type: module
Insulation resistance: > 10 MΩ
Operating temperature: -40°C ~ +125°C.
ABB 5SHX1060H0003 3BHB020538R0001 IGCT module is designed with active rectifier unit (ARU) self-reversing technology, 6-pulse, 3-stage voltage source inverter combined with IGCT technology, so that it is optimized in the medium frequency (<1 kHz) and wide temperature range. Demonstrating high reliability and high electromagnetic immunity. In addition, the module also has a simple control interface that supports state feedback AC or DC power supply voltage to facilitate series connection.
This IGCT module is suitable for a variety of HVDC and AC applications, including but not limited to power systems, industrial drives, wind farms, frequency converters, and more. Its high bufferless shutdown rating and application-specific optimization make it ideal for efficient power conversion.
At present, the 5SHX1060H0003 3BHB020538R0001 IGCT module is available on the market, and buyers can enjoy a 365 day warranty service. Suppliers offer new or used options and ensure fast shipping, which can usually be arranged within 3 days of payment. For users who require further technical advice or product quotes, the supplier can be contacted online or by phone for more detailed information.